This state of diode is known as forward biased state. d) 24 GHz They range from diodes with opti… View Answer, 4. View Answer, 8. d) None of the mentioned View Answer, 2. c) Spectrum analyzer © 2011-2021 Sanfoundry. An TRAPATT diode (T rapped P lasma A valanche Triggered Transit- T ime), is a very high efficiency microwave generator, capable of operating from several hundred M Hz to several GHz. Multiple Choice Questions and Answers on Semiconductor Diode Multiple Choice Questions and Answers By Sasmita January 9, 2020 In addition to reading the questions and answers on my site, I would suggest you to check the following, on amazon, as well: As the area of rectifying contact goes on increasing, the forward resistance of the Schottky diode: a) Mixer A metal-semiconductor junction formed between a metal and n-type semiconductor creates a barrier or depletion layer known as a schottky barrier. The diodes are classified into different types based on their working principles and characteristics. b) Size a) Gain TRAPATT DIODE ANKIT KUMAR PANDEY M.TECH 3rd sem ALLAHABAD UNIVERSITY 1 ankit_pandey 2. To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. An IMPATT diode (IMPact ionization Avalanche Transit-Time diode) is a form of high-power semiconductor diode used in high-frequency microwave electronics devices. d) 15.2 % View Answer, 3. View Answer. c) Sensitive receiver d) 6.5 V View Answer, 4. a) Germanium diode To prevent an IMPATT diode from burning, a constant bias source is used to maintain _______ at safe limit. Current is injected through a top ohmic contact. Basically, this diode is normally used as a microwave oscillator, however, it has the advantage of a better level of efficiency normally the DC to RF signal alteration efficiency may be in the area of 20 to 60%. c) Operating frequency d) average resistance The most important functional unit of a spectrum analyzer is: View Answer, 11. 1) serves as the gain medium of an ECL. b) false What is claimed is 1. When a reverse bias voltage exceeding the breakdown voltage is applied to an IMPATT diode, it results in: Join our social networks below and stay updated with latest contests, videos, internships and jobs! d) Network analyzer View Answer, 3. b) break down of depletion region The depletion layer barrier at the junction is very thin 100 ̇ A or 10-6 cm. c) 12 % It consists of a p+ region and n+ layers at the two ends. ... Rate effect in four layer diodes. Participate in the Sanfoundry Certification contest to get free Certificate of Merit. b) false Schottky diode can switch on and off much faster than the p-n junction diode. An essential requirement for the BARITT diode is that the intermediate drift region be completely filled to cause the punch through to occur. c) Four 1. The TRAPATT diode's diameter ranges from as small as 50 μm for CW operation to 750 μm at lower frequency for highpeak- power devices. A major disadvantage of TRAPATT diode is: c) GaAs diode With the ability to operate at frequencies between about 3 and 100 GHz or more, one of the main advantages of this microwave diode is the relatively high power capability of the IMPATT diode. View Answer, 10. b) Low operational bandwidth A PN junction photodiode is made of two layers namely p-type and n-type semiconductor whereas PIN photodiode is made of three layers namely p-type, n-type and intrinsic semiconductor. b) False 1. c) 30 GHz the biggest advantage of trapatt diode over impatt diode is it's ? a) Two a) two • In conventional system, there are two letters at the start, first one indicates semiconductor material (A = germanium, B = Silicon) and the second letter indicates applications of diode (A= signal diode, Y = Rectifier diode, Z = Zener diode). d) No compromise is made on any of the parameter d) none of the mentioned d) None of the mentioned This set of Microwave Engineering Multiple Choice Questions & Answers (MCQs) focuses on “Applications of RF Diodes”. The figure below depicts the structure of an ordinary diode and its symbol. higher efficiency. It consists of two layers of semiconductors. A Diode is an electronic component that has two terminals and allows current to flow only in one direction. 1. introduction The TRAPATT (Tra pped P lasma A valanche T riggered T ransit) diode is another microwave energy which is used as both amplifier and oscillator. For very high frequency operation, these dimensions are reduced. a) True Trapatt diode 1. They operate at frequencies of about 3 and 100 GHz, or higher. The rapid increase in terminal current with applied voltage (above 30 V) is caused by thermionic hole injection into the semiconductor as the depletion layer of the reverse-biased contact reaches through the entire device thickness. The substrate 1 and the semiconductor layers 2, 3, 4 are chosen analogously to embodiment 1 with regard to the layer thickness and layer composition. d) High forward biased current b) Oscilloscope In accordance with the invention, diode 14 is typically a Trapatt diode; that is, a diode capable of sustaining Trapatt mode oscillations. TRAPATT diode is normally mounted at a point inside a coaxial resonator where there is minimum RF voltage swing. b) 6.4 V If the RMS peak current in an IMPATT diode is 700 mA and if DC input power is 6 watt, with the load resistance being equal to 2.5 Ω, the efficiency of the diode is: a) average current A tunnel diode is a p-n junction diode with a doping profile that allows electron tunneling through a narrow energy band gap. In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the p-type and n-type semiconductor to increase the minority carrier current. Of the two terminals, one terminal is connected to a p-type semiconductor material and the other terminal to an n-type semiconductor.Depending on the physical structure and the type of semiconductor materials used in the construction of a diode, many different diode variants are possible. ratings are 6.2v and 24v respectively than? View Answer, 7. The higher … Participate in the Sanfoundry Certification contest to get free Certificate of Merit. c) 2.5×10-11 seconds The material used to fabricate IMPATT diodes is GaAs since they have the highest efficiency in all aspects. All Rights Reserved. However, TRAPATT diode has a number of advantages and also a number of applications. In order to achieve high current density, a compromise in _______is made in a TRAPATT diode. b) High junction capacitance c) Vd/2πl The electric field in the entire space charge region is the largest at N + P. b) 10.21 % _________ gives a frequency domain representation of a signal, displaying the average power density versus frequency. Semiconductor, any of a class of crystalline solids intermediate in electrical conductivity between a conductor and an insulator.Semiconductors are employed in the manufacture of various kinds of electronic devices, including diodes, transistors, and integrated circuits.Such devices have found wide application because of their compactness, reliability, power efficiency, and low cost. View Answer, 9. Principles of Operation :- A … In between these layers, a p type layer and an intrinsic region is sandwiched. a) Increases c) high reverse saturation current For a typical Read diode the n-layer may be only 1 to 2 µm thick, and the intrinsic layer may be between 2 and 20µm thick. c) Frequency sensitive If a large reverse voltage is applied across the diode, the space charge region is widened from the N + P junction to the IP + junction. © 2011-2020 Sanfoundry. View Answer, 10. • In american system, code starts with 1N followed by serial number of the diode. The laser diode is a semiconductor device about 250 to 500 μm long by about 60 μm thick mounted on a copper or ceramic heat sink. 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This page covers advantages and disadvantages of Diode. Theory & Design of Ferrimagnetic Components, here is complete set of 1000+ Multiple Choice Questions and Answers, Prev - Microwave Engineering Questions and Answers – IMPATT and BARITT Diodes, Next - Microwave Engineering Questions and Answers – Heterojunction BJT – 1, VLSI Questions and Answers – Built-in Self Test, Microwave Engineering Questions and Answers – Heterojunction BJT – 1, Optical Communications Questions and Answers, Manufacturing Engineering / Processes I Questions and Answers, Instrumentation Transducers Questions and Answers, Electronics & Communication Engineering Questions and Answers, Electrical Engineering Questions and Answers, Electrical & Electronics Engineering Questions and Answers, Master of Computer Applications Questions and Answers, Bachelor of Computer Applications Questions and Answers, Basic Electrical Engineering Questions and Answers, Engineering Physics II Questions and Answers, Electronic Devices and Circuits Questions and Answers, Microwave Engineering Questions and Answers, Microwave Engineering Questions and Answers – Crystal Oscillators. Classical p-n junction diode cannot be used for high frequency applications because of: One layer is doped with P-type material and the other layer with N-type material. Join our social networks below and stay updated with latest contests, videos, internships and jobs! b) 2×10-11 seconds The IMPATT diode or IMPact Avalanche Transit Time diode is an RF semiconductor device that is used for generating microwave radio frequency signals. It operates efficiently below 10 GHz and need greater voltage swing for its operation. A microwave generator which operates between hundreds of MHz … All Rights Reserved. d) none of the mentioned c) Remains unchanged Sanfoundry Global Education & Learning Series – Microwave Engineering. The ordinary signal diodes have a junction formed by p type semiconductor and n type semiconductor, the lead joining p-type is called the anode and the other side lead joining the n-type is called the cathode.. b) False To practice all areas of Microwave Engineering, here is complete set of 1000+ Multiple Choice Questions and Answers. Schottky barrier diode is a sophisticated version of the point contact ______________ The semiconductor diode is a widely used electronics component found in many electronic circuit designs today. A four layer semiconductor diode whose characteristic at the first quadrant is similar to that of a silicon-controlled rectifier (SCR). View Answer, 8. Sanfoundry Global Education & Learning Series – Microwave Engineering. a) 3.2 V d) Vdd/4πl a) True The resonant frequency of an IMPATT diode is given by: The number of semiconductor layers in a TRAPATT diode is: b) average voltage 2.1 Laser Diode Basics. d) One They have negative resistance and are used as oscillators and amplifiers at microwave frequencies. layer type region vertical diode doped Prior art date 2013-07-18 Legal status (The legal status is an assumption and is not a legal conclusion. TRAPATT DIODE Derived from the Trapped Plasma Avalanche … a) Fabrication is costly View Answer. a) true b) three If the critical field in a Gunn diode oscillator is 3.2 KV/cm and effective length is 20 microns, then the critical voltage is: Allahabad UNIVERSITY 1 ankit_pandey 2 multiplication effect and carrier transit time effect in the p-n junction diode with a profile! Which operates between hundreds of MHz … TRAPATT diode average bias voltage d ) average voltage! 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In PIN photodiode, an addition layer called intrinsic semiconductor is placed between the P-type and n-type creates...
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